IRFR13N20DPBF - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IRFR13N20DPBF
Manufacturer

Infineon
ChipWorker Part#

CW11942792
Category

MOSFET, MOSFET Transistor
Package

TO-252-3
Description

DPAK N-CH 200V 13A
Documentation

Datasheet

IRFR13N20DPBF Global Supplier

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IRFR13N20DPBF Specifications

Attribute	Attribute Value

Part Number	IRFR13N20DPBF
Manufacturer	Infineon
ChipWorker Part#	CW11942792
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-252-3
Power Rating	110 W
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.235 Ω
Polarity	N-Channel
Power Dissipation	110 W
Threshold Voltage	5.5 V
Drain to Source Voltage (Vds)	200 V
Continuous Drain Current (Ids)	13A
Rise Time	27 ns
Input Capacitance (Ciss)	830pF @25V(Vds)
Input Power (Max)	110 W
Fall Time	10 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	110W (Tc)
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Size-Length	6.73 mm
Size-Width	6.22 mm
Size-Height	2.39 mm
Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17

Product Description

The IRFR13N20DPBF is a HEXFET® single N-channel Power MOSFET offers low gate-to-drain charge to reduce switching losses. It is suitable for high frequency DC-to-DC converters.
Fully characterized avalanche voltage and current
Fully characterized capacitance including effective COSS to simplify design

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