IRFR9110PBF - VISHAY

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IRFR9110PBF
Manufacturer

VISHAY
ChipWorker Part#

CW40599335
Category

MOSFET, MOSFET Transistor
Package

TO-252-3
Description

TO-252-3P-CH 100V 3.1A 1.2Ω
Documentation

Datasheet

IRFR9110PBF Global Supplier

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IRFR9110PBF Specifications

Attribute	Attribute Value

Part Number	IRFR9110PBF
Manufacturer	VISHAY
ChipWorker Part#	CW40599335
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-252-3
Voltage Rating (DC)	-100 V
Current Rating	-3.10 A
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	1.2 Ω
Polarity	P-Channel
Power Dissipation	2.5 W
Drain to Source Voltage (Vds)	100 V
Breakdown Voltage (Drain to Source)	-100 V
Continuous Drain Current (Ids)	-3.10 A
Rise Time	27 ns
Input Capacitance (Ciss)	200pF @25V(Vds)
Input Power (Max)	2.5 W
Fall Time	17 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	2.5W (Ta), 25W (Tc)
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Size-Length	6.73 mm
Size-Width	6.22 mm
Size-Height	2.39 mm
Operating Temperature	-55℃ ~ 150℃
Product Lifecycle Status	Active
Packaging	Tube
Minimum Packing Quantity	2000
RoHS	RoHS Compliant
Lead-Free Status	Lead Free

Product Description

The IRFR9110PBF is a third generation P-channel enhancement-mode Power MOSFET comes with the best combination of fast switching, ruggedized device design and low ON-resistance. The DPAK is designed for surface-mount using vapour phase, infrared or wave soldering techniques. Power dissipation levels up to 1.5W are possible in typical surface-mount applications.
Dynamic dV/dt rating
Repetitive avalanche rated
Surface-mount

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