IRFS38N20DPBF - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IRFS38N20DPBF
Manufacturer

Infineon
ChipWorker Part#

CW10859250
Category

MOSFET, MOSFET Transistor
Package

TO-252-3
Description

D2PAK N-CH 200V 38A
Documentation

Datasheet

IRFS38N20DPBF Global Supplier

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IRFS38N20DPBF Specifications

Attribute	Attribute Value

Part Number	IRFS38N20DPBF
Manufacturer	Infineon
ChipWorker Part#	CW10859250
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-252-3
Voltage Rating (DC)	200 V
Current Rating	38.0 A
Power Rating	320 W
Number of Channels	1 Channel
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.054 Ω
Polarity	N-Channel
Power Dissipation	320 W
Part Family	IRFS38N20D
Threshold Voltage	5 V
Input Capacitance	2.90 nF
Drain to Source Voltage (Vds)	200 V
Breakdown Voltage (Drain to Source)	200 V
Continuous Drain Current (Ids)	44.0 A
Rise Time	95 ns
Input Capacitance (Ciss)	2900pF @25V(Vds)
Input Power (Max)	3.8 W
Fall Time	47 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	3.8W (Ta), 300W (Tc)
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Size-Length	10.67 mm
Size-Width	6.22 mm
Size-Height	4.83 mm
Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17

Product Description

The IRFS38N20DPBF is a HEXFET® single N-channel Power MOSFET offers fully characterized capacitance including effective COSS to simplify design. It is suitable for high frequency DC-to-DC converters and plasma display panel.
Fully characterized avalanche voltage and current
Low gate-to-drain charge to reduce switching losses

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