IRS21531DPBF - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IRS21531DPBF
Manufacturer

Infineon
ChipWorker Part#

CW11110533
Category

FET Driver
Package

PDIP-8
Description

MOSFET DRVR 600V 0.26A 2Out Hi/Lo Side Half Brdg Inv/Non-Inv 8Pin PDIP Tube
Documentation

Datasheet

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IRS21531DPBF Specifications

Attribute	Attribute Value

Part Number	IRS21531DPBF
Manufacturer	Infineon
ChipWorker Part#	CW11110533
Category	FET Driver
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	8 Pin
Case/Package	PDIP-8
Supply Voltage (DC)	10.1V (min)
Operating Voltage	10.1V ~ 16.8V
Power Rating	1 W
Rise/Fall Time	120ns, 50ns
Number of Outputs	2 Output
Output Voltage	600 V
Output Current	180.260 mA
Number of Channels	2 Channel
Number of Positions	8 Position
Power Dissipation	1000 mW
Quiescent Current	800 µA
Rise Time	120 ns
Fall Time	50 ns
Fall Time (Max)	80 ns
Fall Time (Max)	220 ns
Operating Temperature (Max)	125 ℃
Operating Temperature (Min)	-40 ℃
Power Dissipation (Max)	1000 mW
Supply Voltage	10V ~ 15.4V
Supply Voltage (Max)	16.8 V
Supply Voltage (Min)	10.1 V
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Size-Length	10.92 mm
Size-Width	7.11 mm
Size-Height	5.33 mm
Operating Temperature	-40℃ ~ 125℃
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

The IRS21531DPBF is a self-oscillating half-bridge Gate Driver IC using a more advanced silicon platform and incorporates a high voltage half-bridge gate driver with a front end oscillator similar to the industry standard CMOS 555 timer. The HVIC and latch immune CMOS technologies enable rugged monolithic construction. The output driver features a high pulse current buffer stage designed for minimum driver cross-conduction. Noise immunity is achieved with low di/dt peak of the gate driver. It is based on the popular IR2153 self-oscillating half-bridge gate driver IC.
CT, RT programmable oscillator
Micropower start-up
Non-latched shutdown on CT pin
Internal bootstrap FET
Excellent latch immunity on all inputs and outputs
±50V/ns dV/dt Immunity
ESD protection on all pins
Internal dead time

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