IXDN75N120 - IXYS Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IXDN75N120
Manufacturer

IXYS Semiconductor
ChipWorker Part#

CW53288788
Category

IGBT Transistor, IGBT Module
Package

SOT-227-4
Description

Trans IGBT Chip N-CH 1200V 150A 660000mW 4Pin SOT-227B
Documentation

Datasheet

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IXDN75N120 Specifications

Attribute	Attribute Value

Part Number	IXDN75N120
Manufacturer	IXYS Semiconductor
ChipWorker Part#	CW53288788
Category	IGBT Transistor, IGBT Module
Documentation	Datasheet
Mounting Style	Chassis
Number of Pins	4 Pin
Case/Package	SOT-227-4
Power Dissipation	660000 mW
Breakdown Voltage (Collector to Emitter)	1200 V
Input Capacitance (Cies)	5.5nF @25V
Input Power (Max)	660 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-40 ℃
Power Dissipation (Max)	660000 mW
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Operating Temperature	-40℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
ECCN Code	EAR99

Product Description

Don"t be afraid to step up the amps in your device when using this IXDN75N120 IGBT transistor from Ixys Corporation. It has a maximum collector emitter voltage of 1200 V. Its maximum power dissipation is 660000 mW. It is made in a single dual emitter configuration. This IGBT transistor has a minimum operating temperature of -40 °C and a maximum of 150 °C.

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