IXFH16N50P - IXYS Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IXFH16N50P
Manufacturer

IXYS Semiconductor
ChipWorker Part#

CW40159240
Category

MOSFET, MOSFET Transistor
Package

TO-247-3
Description

TO-247 N-CH 500V 16A
Documentation

Datasheet

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IXFH16N50P Specifications

Attribute	Attribute Value

Part Number	IXFH16N50P
Manufacturer	IXYS Semiconductor
ChipWorker Part#	CW40159240
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-247-3
Voltage Rating (DC)	500 V
Current Rating	16.0 A
Drain to Source Resistance (on) (Rds)	400 mΩ
Polarity	N-Channel
Power Dissipation	300 W
Input Capacitance	2.25 nF
Gate Charge	43.0 nC
Drain to Source Voltage (Vds)	500 V
Breakdown Voltage (Drain to Source)	500 V
Continuous Drain Current (Ids)	16.0 A
Rise Time	25 ns
Input Capacitance (Ciss)	2250pF @25V(Vds)
Input Power (Max)	300 W
Fall Time	22 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	300W (Tc)
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Size-Length	16.26 mm
Size-Width	5.3 mm
Size-Height	21.46 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free

Product Description

Amplify electronic signals and switch between them with the help of Ixys Corporation"s IXFH16N50P power MOSFET. Its maximum power dissipation is 300000 mW. This device is made with hiperfet technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.

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