IXFN44N80 - IXYS Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IXFN44N80
Manufacturer

IXYS Semiconductor
ChipWorker Part#

CW64230322
Category

High Voltage MOS Transistor
Package

SOT-227-4
Description

Trans MOSFET N-CH 800V 44A 4Pin SOT-227B
Documentation

Datasheet

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IXFN44N80 Specifications

Attribute	Attribute Value

Part Number	IXFN44N80
Manufacturer	IXYS Semiconductor
ChipWorker Part#	CW64230322
Category	High Voltage MOS Transistor
Documentation	Datasheet
Mounting Style	Chassis
Number of Pins	3 Pin
Case/Package	SOT-227-4
Power Rating	700 W
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	165 mΩ
Polarity	N-Channel
Power Dissipation	700 W
Threshold Voltage	4.5 V
Drain to Source Voltage (Vds)	800 V
Continuous Drain Current (Ids)	44.0 A
Rise Time	48 ns
Input Capacitance (Ciss)	10000pF @25V(Vds)
Fall Time	24 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Junction Temperature (Max)	150 ℃
Power Dissipation (Max)	700W (Tc)
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Material	Silicon
Weight	0.000036 kg
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/06/15
ECCN Code	EAR99

Product Description

The IXFN44N80 is a HiPerFET™ N-channel enhancement-mode Single Die Power MOSFET features avalanche rated and fast intrinsic rectifier.
International standard package
miniBLOC with aluminium nitride isolation
Low RDS (ON) HDMOS™ process
Unclamped inductive switching (UIS) rated
Rugged polysilicon gate cell structure
Low package inductance
Easy to mount
Space savings
High power density
High dV/dt and low trr

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