IXTP6N50D2 - IXYS Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IXTP6N50D2
Manufacturer

IXYS Semiconductor
ChipWorker Part#

CW74072333
Category

MOSFET, MOSFET Transistor
Package

TO-220-3
Description

TO-220AB N-CH 500V
Documentation

Datasheet

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IXTP6N50D2 Specifications

Attribute	Attribute Value

Part Number	IXTP6N50D2
Manufacturer	IXYS Semiconductor
ChipWorker Part#	CW74072333
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Polarity	N-CH
Power Dissipation	300 W
Drain to Source Voltage (Vds)	500 V
Rise Time	72 ns
Input Capacitance (Ciss)	2800pF @25V(Vds)
Fall Time	43 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	300W (Tc)
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Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free

Product Description

Amplify electronic signals and switch between them with the help of Ixys Corporation"s IXTP6N50D2 power MOSFET. Its maximum power dissipation is 300000 mW. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.

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