IXXN100N60B3H1 - IXYS Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IXXN100N60B3H1
Manufacturer

IXYS Semiconductor
ChipWorker Part#

CW73501313
Category

IGBT Transistor, IGBT Module
Package

SOT-227-4
Description

Trans IGBT Chip N-CH 600V 440A 500000mW 4Pin SOT-227B
Documentation

Datasheet

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IXXN100N60B3H1 Specifications

Attribute	Attribute Value

Part Number	IXXN100N60B3H1
Manufacturer	IXYS Semiconductor
ChipWorker Part#	CW73501313
Category	IGBT Transistor, IGBT Module
Documentation	Datasheet
Mounting Style	Chassis
Number of Pins	4 Pin
Case/Package	SOT-227-4
Power Dissipation	500000 mW
Breakdown Voltage (Collector to Emitter)	600 V
Input Capacitance (Cies)	4.86nF @25V
Input Power (Max)	500 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	500000 mW
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Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
ECCN Code	EAR99

Product Description

You won"t need to worry about any lagging in your circuit with this IXXN100N60B3H1 IGBT transistor from Ixys Corporation. It has a maximum collector emitter voltage of 600 V. Its maximum power dissipation is 500000 mW. This IGBT transistor has an operating temperature range of -55 °C to 150 °C. It is made in a single dual emitter configuration. This device utilizes xpt technology.

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