JANTX1N5420 - Microsemi

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

JANTX1N5420
Manufacturer

Microsemi
ChipWorker Part#

CW49598614
Category

TVS Diode
Package

Case E
Description

Diode Switching 600V 3A 2Pin Case E
Documentation

Datasheet

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JANTX1N5420 Specifications

Attribute	Attribute Value

Part Number	JANTX1N5420
Manufacturer	Microsemi
ChipWorker Part#	CW49598614
Category	TVS Diode
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	2 Pin
Case/Package	Case E
Forward Voltage	1.5 V
Reverse recovery time	400 ns
Maximum Forward Voltage (Max)	1.5V @9A
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-65 ℃
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Product Lifecycle Status	Active
Packaging	Bag
RoHS	Non-Compliant
Lead-Free Status	Contains Lead

Product Description

DESCRIPTION
This “fast recovery” rectifier diode series is military qualified and is ideal for high-reliability applications where a failure cannot be tolerated. These industry-recognized 3.0 amp rated rectifiers for working peak reverse voltages from 50 to 600 volts are hermetically sealed with voidless-glass construction using an internal “Category 1” metallurgical bond. These devices are also available in surface mount MELF package configurations. Microsemi also offers numerous other rectifier products to meet higher and lower current ratings with various recovery time speed requirements including fast and ultrafast device types in both through-hole and surface mount packages.
FEATURES
• Popular JEDEC registered 1N5415 thru 1N5420 series.
• Voidless hermetically sealed glass package.
• Quadruple-layer passivation.
• Internal “Category 1” metallurgical bonds.
• Working Peak Reverse Voltage 50 to 600 volts.
• JAN, JANTX, JANTXV and JANS qualifications available per MIL-PRF-19500/411.
• RoHS compliant versions available (commercial grade only).
APPLICATIONS / BENEFITS
• Fast recovery 3 amp 50 to 600 volt rectifiers.
• Military and other high-reliability applications.
• General rectifier applications including bridges, half-bridges, catch diodes, etc.
• High forward surge current capability.
• Extremely robust construction.
• Low thermal resistance.
• Controlled avalanche with peak reverse power capability.
• Inherently radiation hard as described in Microsemi “MicroNote 050”.<

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- Carefully tested and packaged by ChipWorker
- Vacuum packed
- Anti-static packaging
- Anti-vibration foam
- Income quality control (IQC), 800+ qualified distributors.
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- Decapsulation control
- X-ray inspection
- XRF inspection
- Electrical testing
- Surface testing

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