JANTX2N3019 - Microsemi

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

JANTX2N3019
Manufacturer

Microsemi
ChipWorker Part#

CW48437763
Category

BJT Transistor, BJT
Package

TO-5-3
Description

JANTX Series 80V 1A NPN Through Hole Low Power Silicon Transistor - TO-5
Documentation

Datasheet

JANTX2N3019 Global Supplier

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JANTX2N3019 Specifications

Attribute	Attribute Value

Part Number	JANTX2N3019
Manufacturer	Microsemi
ChipWorker Part#	CW48437763
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-5-3
Power Dissipation	0.8 W
Breakdown Voltage (Collector to Emitter)	80 V
hFE Min	50 @500mA, 10V
hFE Max	300 @150mA, 10V
Input Power (Max)	800 mW
Operating Temperature (Max)	200 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	800 mW
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Material	Silicon
Operating Temperature	-65℃ ~ 200℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tray
RoHS	Non-Compliant
Lead-Free Status	Contains Lead

Product Description

This 2N3019 NPN leaded silicon transistor device is military qualified for high-reliability applications. Microsemi also offers numerous other transistor products to meet higher and lower power ratings with various switching speed requirements in both through-hole and surface-mount packages.

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