MJE700 - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

MJE700
Manufacturer

ON Semiconductor
ChipWorker Part#

CW122163433
Category

BJT Transistor, BJT
RoHS

Lead free / RoHS Compliant
Description

TO-225-3 PNP 60V 4A
Documentation

Datasheet

MJE700 Global Supplier

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MJE700 Specifications

Attribute	Attribute Value

Part Number	MJE700
Manufacturer	ON Semiconductor
ChipWorker Part#	CW122163433
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Case/Package	TO-225-3
Voltage Rating (DC)	-60.0 V
Current Rating	-4.00 A
Polarity	Dual P-Channel
Power Dissipation	40.0 W
Breakdown Voltage (Collector to Emitter)	-60.0 V
Continuous Collector Current	4A
hFE Min	100
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
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Size-Length	7.74 mm
Size-Width	2.66 mm
Size-Height	11.04 mm
Product Lifecycle Status	Unknown
Packaging	Bulk
Minimum Packing Quantity	500
RoHS	RoHS Compliant
Lead-Free Status	Contains Lead
ECCN Code	EAR99

Product Description

The Darlington Bipolar Power Transistor is designed for general purpose amplifier and low speed switching applications. The MJE700, MJE702, MJE703 (PNP); and MJE800, MJE802, MJE803 (NPN) are complementary devices.
Features
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High DC Current Gain -
hFE = 2000 (Typ) @ IC = 2.0 Adc
Monolithic Construction with Built-in Base-Emitter Resistors to Limit Leakage Multiplication
Choice of Packages -
MJE700 and MJE800 series
Pb-Free Packages are Available

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