NGTB25N120IHLWG - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

NGTB25N120IHLWG
Manufacturer

ON Semiconductor
ChipWorker Part#

CW32493721
Category

IGBT Transistor, IGBT Module
Package

TO-247-3
Description

IGBT Single Transistor, 50A, 1.85V, 192W, 1.2kV, TO-247, 3Pins
Documentation

Datasheet

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NGTB25N120IHLWG Specifications

Attribute	Attribute Value

Part Number	NGTB25N120IHLWG
Manufacturer	ON Semiconductor
ChipWorker Part#	CW32493721
Category	IGBT Transistor, IGBT Module
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-247-3
Number of Positions	3 Position
Power Dissipation	192 W
Breakdown Voltage (Collector to Emitter)	1200 V
Input Power (Max)	192 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	192 W
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Size-Length	16.26 mm
Size-Width	5.3 mm
Size-Height	21.08 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
ECCN Code	EAR99

Product Description

The NGTB25N120IHLWG is a 1200V (Insulated Gate Bipolar Transistor) IGBT features a robust and cost effective Field Stop (FS) trench construction. It provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is well suited for resonant or soft switching applications. Incorporated into the device is a rugged co-packaged freewheeling diode with a low forward voltage.
Low saturation voltage using trench with field-stop technology
Low switching loss reduces system power dissipation
Optimized for low case temperature in IH cooker application
Low gate charge
Low conduction loss
±20V Gate to emitter voltage
0.65°C/W IGBT thermal resistance, junction to case
2°C/W Diode thermal resistance, junction to case
40°C/W Thermal resistance, junction to ambient

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