NJV4030PT1G - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

NJV4030PT1G
Manufacturer

ON Semiconductor
ChipWorker Part#

CW41456632
Category

BJT Transistor, BJT
Package

SOT-223-4
Description

SOT-223 PNP 40V 3A
Documentation

Datasheet

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NJV4030PT1G Specifications

Attribute	Attribute Value

Part Number	NJV4030PT1G
Manufacturer	ON Semiconductor
ChipWorker Part#	CW41456632
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	4 Pin
Case/Package	SOT-223-4
Frequency	160 MHz
Number of Positions	4 Position
Polarity	PNP
Power Dissipation	2 W
Breakdown Voltage (Collector to Emitter)	40 V
Continuous Collector Current	3A
hFE Min	200 @1A, 1V
hFE Max	400 @1A, 1V
Input Power (Max)	2 W
DC Current Gain (hFE)	100
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	2000 mW
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Material	Silicon
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free

Product Description

ON Semiconductor has the solution to your circuit"s high-voltage requirements with their PNP NJV4030PT1G general purpose bipolar junction transistor. This bipolar junction transistor"s maximum emitter base voltage is 6 V. Its maximum power dissipation is 2000 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 40 V and a maximum emitter base voltage of 6 V.

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