NTJD5121NT1G - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

NTJD5121NT1G
Manufacturer

ON Semiconductor
ChipWorker Part#

CW1267168
Category

MOSFET, MOSFET Transistor
Package

SOT-363
Description

SC-88 N-CH 60V 0.295A
Documentation

Datasheet

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NTJD5121NT1G Specifications

Attribute	Attribute Value

Part Number	NTJD5121NT1G
Manufacturer	ON Semiconductor
ChipWorker Part#	CW1267168
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	6 Pin
Case/Package	SOT-363
Number of Positions	6 Position
Drain to Source Resistance (on) (Rds)	1 Ω
Polarity	Dual N-Channel
Power Dissipation	266 mW
Threshold Voltage	1.7 V
Drain to Source Voltage (Vds)	60 V
Continuous Drain Current (Ids)	330 mA, 295 mA
Rise Time	34 ns
Maximum Forward Voltage (Max)	1.2 V
Input Capacitance (Ciss)	26pF @20V(Vds)
Input Power (Max)	250 mW
Fall Time	32 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	266 mW
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Size-Length	2.2 mm
Size-Width	1.35 mm
Size-Height	1 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

The NTJD5121NT1G is a dual N-channel Power MOSFET with ESD protection, low gate threshold and low input capacitance.
±20V Gate-source voltage
900mA Pulsed drain current
1400V Gate-source ESD rating

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