S29GL512S10DHI020 - Spansion

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

S29GL512S10DHI020
Manufacturer

Spansion
ChipWorker Part#

CW122151521
Category

Flash Memory, Flash
Package

FBGA-64
Description

NOR Flash Parallel 3V/3.3V 512Mbit 32M x 16Bit 100ns 64Pin FBGA Tray
Documentation

Datasheet

S29GL512S10DHI020 Global Supplier

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S29GL512S10DHI020 Specifications

Attribute	Attribute Value

Part Number	S29GL512S10DHI020
Manufacturer	Spansion
ChipWorker Part#	CW122151521
Category	Flash Memory, Flash
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	64 Pin
Case/Package	FBGA-64
Supply Voltage (DC)	2.70V (min)
Supply Current	60 mA
Access Time	100 ns
Memory Size	64000000 B
Access Time(Max)	100 ns
Operating Temperature (Max)	85 ℃
Operating Temperature (Min)	-40 ℃
Supply Voltage	2.7V ~ 3.6V
Supply Voltage (Max)	3.6 V
Supply Voltage (Min)	2.7 V
	expand all
Product Lifecycle Status	Active
Packaging	Tray
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
HK STC License	NLR

Product Description

GL-S MirrorBit® Eclipse™ Flash Non-Volatile Memory Family
S29GL01GS 1 Gbit (128 Mbyte)
S29GL512S 512 Mbit (64 Mbyte)
S29GL256S 256 Mbit (32 Mbyte)
S29GL128S 128 Mbit (16 Mbyte)
CMOS 3.0 Volt Core with Versatile I/O
General Description
The Spansion® S29GL01G/512/256/128S are MirrorBit Eclipse flash products fabricated on 65 nm process technology. These devices offer a fast page access time as fast as 15 ns with a corresponding random access time asfast as 90 ns. They feature a Write Buffer that allows a maximum of 256 words/512 bytes to be programmed in one operation, resulting infaster effective
programming time than standard programming algorithms. Thismakes these devices ideal for today’s embedded applications that require higher density, better performance and lower power consumption.
Distinctive Characteristics
65 nm MirrorBit Eclipse Technology
Single supply (VCC) for read / program / erase (2.7V to 3.6V)
Versatile I/O Feature
– Wide I/O voltage range (VIO): 1.65V to VCC
x16 data bus
Asynchronous 32-byte Page read
512-byte Programming Buffer
– Programming in Page multiples, up to a maximum of 512 bytes
Single word and multiple program on same word options
Sector Erase
– Uniform 128-kbyte sectors
Suspend and Resume commands for Program and Erase operations
Status Register, Data Polling, and Ready/Busy pin methods to determine device status
Advanced Sector Protection (ASP)
– Volatile and non-volatile protection methods for each sector
Separate 1024-byte One Time Program (OTP) array with two lockable regions
Common Flash Interface (CFI) parameter table
Temperature Range
– Industrial (-40°C to +85°C)
– In-Cabin (-40°C to +105°C)
100,000 erase cycles for any sector typical
20-year data retention typical
Packaging Options
– 56-pin TSOP
– 64-ball LAA Fortified BGA, 13 mm x 11 mm
– 64-ball LAE Fortified BGA, 9 mm x 9 mm
– 56-ball VBU Fortified BGA, 9 mm x 7 mm

expand all

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Ordering Information

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- Carefully tested and packaged by ChipWorker
- Vacuum packed
- Anti-static packaging
- Anti-vibration foam
- Income quality control (IQC), 800+ qualified distributors.
- Authorities test the chip to ensure the quality, authenticity and safety of your device.
- Decapsulation control
- X-ray inspection
- XRF inspection
- Electrical testing
- Surface testing

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