S2SC4617G - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

S2SC4617G
Manufacturer

ON Semiconductor
ChipWorker Part#

CW53488542
Category

BJT Transistor, BJT
Package

SC-75-3
Description

SOT-416 NPN 50V 0.1A
Documentation

Datasheet

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S2SC4617G Specifications

Attribute	Attribute Value

Part Number	S2SC4617G
Manufacturer	ON Semiconductor
ChipWorker Part#	CW53488542
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	SC-75-3
Frequency	180 MHz
Halogen Free Status	Halogen Free
Polarity	NPN
Power Dissipation	0.125 W
Breakdown Voltage (Collector to Emitter)	50 V
Continuous Collector Current	0.1A
hFE Min	120 @1mA, 6V
hFE Max	560
Input Power (Max)	125 mW
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	125 mW
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Material	Silicon
Operating Temperature	150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
ECCN Code	EAR99

Product Description

Design filters, receivers, transmitters, op-amps, power supplies, and control circuits with this versatile NPN S2SC4617G GP BJT from ON Semiconductor. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 125 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. It has a maximum collector emitter voltage of 50 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.

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