SI4435DY ,MOSFET, MOSFET Transistor - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Popularity Score

101 points

Part No

SI4435DY
Manufacturer

ON Semiconductor
ChipWorker Part#

CW2212184
Category

MOSFET, MOSFET Transistor
Package

SOIC-8
Description

MOSFET P-CH 30V 8.8A 8-SOIC
Documentation

Datasheet
Ships from

Moscow
Наличие

7850 pcs In Stock
Estimated Price

$ 0.47

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SI4435DY Specifications

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Attribute	Attribute Value

Part Number	SI4435DY
Manufacturer	ON Semiconductor
ChipWorker Part#	CW2212184
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	8 Pin
Case/Package	SOIC-8
Number of Positions	8 Position
Drain to Source Resistance (on) (Rds)	0.015 Ω
Power Dissipation	2.5 W
Threshold Voltage	1.7 V
Drain to Source Voltage (Vds)	30 V
Rise Time	13.5 ns
Input Capacitance (Ciss)	1604pF @15V(Vds)
Input Power (Max)	1 W
Fall Time	25 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	2.5 W
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Size-Length	4.9 mm
Size-Width	3.9 mm
Size-Height	1.57 mm
Operating Temperature	-55℃ ~ 175℃
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free

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Product Description

The SI4435DY is a -30V P-channel PowerTrench® MOSFET has been specially tailored to minimize the on-state resistance and to maintain low gate charge for superior switching performance. Fairchild"s the latest medium voltage power MOSFET is optimized power switches combining small gate charge (QG), small reverse recovery charge (Qrr) and soft reverse recovery body diode, which contributes fast switching for synchronous rectification in AC/DC power supplies. It employs shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (figure of merit (QGxRDS(ON))) of these devices is 66% lower than that of previous generation. Soft body diode performance of new PowerTrench® MOSFET is able to eliminate snubber circuit or replace higher voltage rating - MOSFET need circuit because it can minimize the undesirable voltage spikes in synchronous rectification. This product is general usage and suitable for many different applications.
Low gate charge
High performance trench technology for extremely low RDS (on)
High power and current handling capability

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