SN65LVDS1DBVT - TI

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

SN65LVDS1DBVT
Manufacturer

TI
ChipWorker Part#

CW2125013
Category

Interface IC, Interface Controller
Package

SOT-23-5
Description

LVDS PHY (<800Mbps) Single LVDS Transmitter LVDS Driver/Receiver 0.454V 5Pin SOT-23 T/R
Documentation

Datasheet

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SN65LVDS1DBVT Specifications

Attribute	Attribute Value

Part Number	SN65LVDS1DBVT
Manufacturer	TI
ChipWorker Part#	CW2125013
Category	Interface IC, Interface Controller
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	5 Pin
Case/Package	SOT-23-5
Supply Voltage (DC)	2.40V (min)
Input Current	8.00 mA
Power Dissipation	385 W
Data Rate	630 Mbps
Output Voltage (Max)	4 V
Output Current (Max)	24 mA
Input Current (Min)	20 μA
Operating Temperature (Max)	85 ℃
Operating Temperature (Min)	-40 ℃
Power Dissipation (Max)	725 mW
Supply Voltage	2.4V ~ 3.6V
Supply Voltage (Max)	3.6 V
Supply Voltage (Min)	2.4 V
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Size-Length	2.9 mm
Size-Width	1.6 mm
Size-Height	1.15 mm
Operating Temperature	-40℃ ~ 85℃
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/06/15
ECCN Code	EAR99

Product Description

The SN65LVDS1DBVT is a single LVDS Transmitter with LVTTL input and LVDS output. The SN65LVDS1 device is used with a LVDS receiver in a point-to-point connection, data or clocking signals can be transmitted over printed-circuit board traces or cables at very high rates with very low electromagnetic emissions and power consumption. The packaging, low power, low EMI, high ESD tolerance and wide supply voltage range make the device ideal for battery-powered applications.
Receiver output and inputs are high-impedance with VCC
Receiver has open-circuit, fail-safe design
Differential input voltage threshold less than 100mV
Green product and no Sb/Br
This device has limited built-in ESD protection, leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.

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