STB8N65M5 - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

STB8N65M5
Manufacturer

ST Microelectronics
ChipWorker Part#

CW13089270
Category

MOSFET, MOSFET Transistor
Package

TO-263-3
Description

D2PAK N-CH 650V 7A
Documentation

Datasheet

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STB8N65M5 Specifications

Attribute	Attribute Value

Part Number	STB8N65M5
Manufacturer	ST Microelectronics
ChipWorker Part#	CW13089270
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-263-3
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.56 Ω
Polarity	N-Channel
Power Dissipation	70 W
Threshold Voltage	4 V
Drain to Source Voltage (Vds)	650 V
Continuous Drain Current (Ids)	7A
Rise Time	14 ns
Input Capacitance (Ciss)	690pF @100V(Vds)
Input Power (Max)	70 W
Fall Time	11 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	70W (Tc)
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Size-Length	10.75 mm
Size-Width	10.4 mm
Size-Height	4.6 mm
Material	Silicon
Operating Temperature	150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

The STB8N65M5 is a MDmesh™ V N-channel Power MOSFET offers excellent switching performance. The MDmesh™ V Power MOSFET is based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics" well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low ON-resistance, which is unmatched among silicon based Power MOSFET, making it especially suitable for applications which require superior power density and outstanding efficiency.
Worldwide best RDS (ON) area
Higher VDSS rating
High dV/dt capability
100% Avalanche tested
Easy to drive

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