STE250NS10 - ST Microelectronics
The pictures are for reference only, and the specific specifications can be found in the product manual.
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Part NoSTE250NS10
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ManufacturerST Microelectronics
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ChipWorker Part#CW97450187
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CategoryMOSFET, MOSFET Transistor
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PackageISOTOP-4
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DescriptionSTMICROELECTRONICS STE250NS10 MOSFET Transistor, N Channel, 125A, 100V, 0.0045Ω, 10V, 3V
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DocumentationDatasheet
Payment Methods and Delivery
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STE250NS10 Global Supplier
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STE250NS10 Specifications
| Attribute | Attribute Value |
|---|---|
| Part Number | STE250NS10 |
| Manufacturer | ST Microelectronics |
| ChipWorker Part# | CW97450187 |
| Category | MOSFET, MOSFET Transistor |
| Documentation | Datasheet |
| Mounting Style | Screw |
| Number of Pins | 4 Pin |
| Case/Package | ISOTOP-4 |
| Voltage Rating (DC) | 100 V |
| Current Rating | 220 A |
| Power Rating | 500 W |
| Number of Positions | 4 Position |
| Drain to Source Resistance (on) (Rds) | 4.5 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 500 W |
| Threshold Voltage | 3 V |
| Drain to Source Voltage (Vds) | 100 V |
| Breakdown Voltage (Drain to Source) | 100 V |
| Breakdown Voltage (Gate to Source) | ±20.0 V |
| Continuous Drain Current (Ids) | 220 A |
| Rise Time | 380 ns |
| Input Capacitance (Ciss) | 31000pF @25V(Vds) |
| Input Power (Max) | 500 W |
| Fall Time | 300 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 500W (Tc) |
| expand all | |
| Size-Length | 38.2 mm |
| Size-Width | 25.5 mm |
| Size-Height | 9.1 mm |
| Operating Temperature | 150℃ (TJ) |
| Product Lifecycle Status | Not Recommended for New Designs |
| Packaging | Tube |
| RoHS | RoHS Compliant |
| Lead-Free Status | Lead Free |
| REACH SVHC Compliance | No SVHC |
| REACH SVHC Compliance Edition | 2015/12/17 |
| ECCN Code | EAR99 |
Product Description
- The STE250NS10 is a 100V N-channel STripFET™ Power MOSFET latest development of STMicroelectronics unique "single feature size" strip-based process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
- Standard threshold drive
- 100% Avalanche tested
- ±20V Gate to source voltage
- 0.25°C/W Thermal resistance, junction to case
- 50°C/W Thermal resistance, junction to ambient
Delivery
Chipworker Certification
Ordering Information
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