STE250NS10 ,MOSFET, MOSFET Transistor - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

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33 points

Part No

STE250NS10
Manufacturer

ST Microelectronics
ChipWorker Part#

CW97450187
Category

MOSFET, MOSFET Transistor
Package

ISOTOP-4
Description

STMICROELECTRONICS STE250NS10 MOSFET Transistor, N Channel, 125A, 100V, 0.0045Ω, 10V, 3V
Documentation

Datasheet
Ships from

Moscow
Наличие

In Stock
Estimated Price

$ 26.16

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STE250NS10 Specifications

Consulting Engineer >>

Attribute	Attribute Value

Part Number	STE250NS10
Manufacturer	ST Microelectronics
ChipWorker Part#	CW97450187
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Screw
Number of Pins	4 Pin
Case/Package	ISOTOP-4
Voltage Rating (DC)	100 V
Current Rating	220 A
Power Rating	500 W
Number of Positions	4 Position
Drain to Source Resistance (on) (Rds)	4.5 mΩ
Polarity	N-Channel
Power Dissipation	500 W
Threshold Voltage	3 V
Drain to Source Voltage (Vds)	100 V
Breakdown Voltage (Drain to Source)	100 V
Breakdown Voltage (Gate to Source)	±20.0 V
Continuous Drain Current (Ids)	220 A
Rise Time	380 ns
Input Capacitance (Ciss)	31000pF @25V(Vds)
Input Power (Max)	500 W
Fall Time	300 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	500W (Tc)
	expand all
Size-Length	38.2 mm
Size-Width	25.5 mm
Size-Height	9.1 mm
Operating Temperature	150℃ (TJ)
Product Lifecycle Status	Not Recommended for New Designs
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

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Product Description

The STE250NS10 is a 100V N-channel STripFET™ Power MOSFET latest development of STMicroelectronics unique "single feature size" strip-based process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
Standard threshold drive
100% Avalanche tested
±20V Gate to source voltage
0.25°C/W Thermal resistance, junction to case
50°C/W Thermal resistance, junction to ambient

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