STGB3NC120HDT4 - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

STGB3NC120HDT4
Manufacturer

ST Microelectronics
ChipWorker Part#

CW4317237
Category

IGBT Transistor, IGBT Module
Package

TO-263-3
Description

Trans IGBT Chip N-CH 1200V 14A 75000mW 3Pin(2+Tab) D2PAK T/R
Documentation

Datasheet

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STGB3NC120HDT4 Specifications

Attribute	Attribute Value

Part Number	STGB3NC120HDT4
Manufacturer	ST Microelectronics
ChipWorker Part#	CW4317237
Category	IGBT Transistor, IGBT Module
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-263-3
Number of Positions	3 Position
Power Dissipation	75 W
Input Capacitance	470 pF
Breakdown Voltage (Collector to Emitter)	1200 V
Thermal Resistance	62.5 ℃/W
Reverse recovery time	51 ns
Input Power (Max)	75 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	75000 mW
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Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
ECCN Code	EAR99

Product Description

This STGB3NC120HDT4 IGBT transistor from STMicroelectronics is perfect if your circuit contains high currents passing through it. Its maximum power dissipation is 75000 mW. It has a maximum collector emitter voltage of 1200 V. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. It is made in a single configuration. This IGBT transistor has an operating temperature range of -55 °C to 150 °C.

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