STGWT60V60DF - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

STGWT60V60DF
Manufacturer

ST Microelectronics
ChipWorker Part#

CW28241593
Category

IGBT Transistor, IGBT Module
Package

TO-3-3
Description

Trans IGBT Chip N-CH 600V 80A 375000mW 3Pin(3+Tab) TO-3P Tube
Documentation

Datasheet

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STGWT60V60DF Specifications

Attribute	Attribute Value

Part Number	STGWT60V60DF
Manufacturer	ST Microelectronics
ChipWorker Part#	CW28241593
Category	IGBT Transistor, IGBT Module
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-3-3
Power Dissipation	375 W
Breakdown Voltage (Collector to Emitter)	600 V
Reverse recovery time	74 ns
Input Power (Max)	375 W
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	375 W
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Size-Length	15.7 mm
Size-Width	5.7 mm
Size-Height	26.7 mm
Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
ECCN Code	EAR99

Product Description

This STGWT60V60DF IGBT transistor from STMicroelectronics is an electronic switch that can handle large currents with very little gate current drive. It has a maximum collector emitter voltage of 600 V. Its maximum power dissipation is 375000 mW. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This IGBT transistor has an operating temperature range of -55 °C to 175 °C. It is made in a single configuration.

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