STTH1512W - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

STTH1512W
Manufacturer

ST Microelectronics
ChipWorker Part#

CW15996129
Category

TVS Diode
Package

DO-247-2
Description

STMICROELECTRONICS STTH1512W Fast / Ultrafast Power Diode, 1.2kV, 15A, Single, 1.2V, 53ns, 150A
Documentation

Datasheet

STTH1512W Global Supplier

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STTH1512W Specifications

Attribute	Attribute Value

Part Number	STTH1512W
Manufacturer	ST Microelectronics
ChipWorker Part#	CW15996129
Category	TVS Diode
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	2 Pin
Case/Package	DO-247-2
Voltage Rating (DC)	1.20 kV
Current Rating	15.0 A
Capacitance	12.0 pF
Output Current	≤15.0 A
Forward Voltage	2.1V @15A
Polarity	Standard
Thermal Resistance	1.3 ℃/W
Reverse recovery time	53 ns
Forward Current	15 A
Max Forward Surge Current (Ifsm)	150 A
Maximum Forward Voltage (Max)	1.2 V
Forward Current (Max)	15 A
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-65 ℃
Junction Temperature	175℃ (Max)
Junction Temperature (Max)	175 ℃
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Size-Length	15.75 mm
Size-Width	5.15 mm
Size-Height	20.15 mm
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17

Product Description

The STTH1512W is a high-quality Ultra-fast Recovery Diode with low leakage current, regularly reproducible characteristics and intrinsic ruggedness. These characteristics makes it ideal for heavy duty applications that demand long term reliability. Such demanding applications include industrial power supplies and similar mission-critical systems that require rectification and free-wheeling. It also fits into auxiliary functions such as snubber, bootstrap and demagnetization applications. The improved performance in low leakage current and therefore thermal runaway guard band, is an immediate competitive advantage for this device.
Soft recovery
Very low conduction and switching losses
High frequency and/or high pulsed current operation
High reverse voltage capability
High junction temperature

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