STW26NM50 ,MOSFET, MOSFET Transistor - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Popularity Score

92 points

Part No

STW26NM50
Manufacturer

ST Microelectronics
ChipWorker Part#

CW9794303
Category

MOSFET, MOSFET Transistor
Package

TO-247-3
Description

TO-247 N-CH 500V 30A
Documentation

Datasheet
Ships from

Moscow
Наличие

In Stock
Estimated Price

$ 4.24

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STW26NM50 Specifications

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Attribute	Attribute Value

Part Number	STW26NM50
Manufacturer	ST Microelectronics
ChipWorker Part#	CW9794303
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-247-3
Voltage Rating (DC)	500 V
Current Rating	30.0 A
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.12 Ω
Polarity	N-Channel
Power Dissipation	313 W
Threshold Voltage	4 V
Drain to Source Voltage (Vds)	500 V
Continuous Drain Current (Ids)	30.0 A
Rise Time	15 ns
Input Capacitance (Ciss)	3000pF @25V(Vds)
Input Power (Max)	313 W
Fall Time	19 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	313W (Tc)
	expand all
Operating Temperature	150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2014/06/16
ECCN Code	EAR99

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Product Description

The STW26NM50 is a 500V N-channel Power MOSFET developed using revolutionary MDmesh™ technology, which associates the multiple drain process with the PowerMESH™ horizontal layout. This MOSFET offers extremely low on-resistance, high dv/dt and excellent avalanche characteristics. Improved gate charge and lower power dissipation to meet today"s challenging efficiency requirements.
High dv/dt and avalanche capabilities
Improved ESD capability
Low input capacitance and gate charge
ESD sensitive device, take proper precaution while handling the device.

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