TIP115G - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

TIP115G
Manufacturer

ON Semiconductor
ChipWorker Part#

CW15986563
Category

BJT Transistor, BJT
Package

TO-220-3
Description

TO-220AB PNP 60V 2A
Documentation

Datasheet

TIP115G Global Supplier

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TIP115G Specifications

Attribute	Attribute Value

Part Number	TIP115G
Manufacturer	ON Semiconductor
ChipWorker Part#	CW15986563
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Voltage Rating (DC)	-60.0 V
Current Rating	7.40 A
Output Voltage	60 V
Output Current	2 A
Polarity	PNP
Power Dissipation	2 W
Breakdown Voltage (Collector to Emitter)	60 V
Thermal Resistance	62.5℃/W (RθJA)
Continuous Collector Current	2A
hFE Min	1000 @1A, 4V
Input Power (Max)	2 W
DC Current Gain (hFE)	1000
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	2000 mW
Input Voltage	5 V
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Size-Length	10.28 mm
Size-Width	4.83 mm
Size-Height	15.75 mm
Operating Temperature	-65℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

Look no further than ON Semiconductor"s PNP TIP115G Darlington transistor, which can amplify the signal to provide higher current gains. This Darlington transistor array"s maximum emitter base voltage is 5 V. This product"s maximum continuous DC collector current is 2 A, while its minimum DC current gain is 1000@1A@4 V|500@2A@4V. It has a maximum collector emitter saturation voltage of 2.5@8mA@2A V. Its maximum power dissipation is 2000 mW. This product comes in rail packaging to keep individual parts separated and protected. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 5 V. This Darlington transistor array has an operating temperature range of -65 °C to 150 °C.

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