ZTX458 - Diodes

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

ZTX458
Manufacturer

Diodes
ChipWorker Part#

CW10146638
Category

BJT Transistor, BJT
Package

TO-226-3
Description

Trans GP BJT NPN 400V 0.3A 1000mW Automotive 3Pin E-Line
Documentation

Datasheet

ZTX458 Global Supplier

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ZTX458 Specifications

Attribute	Attribute Value

Part Number	ZTX458
Manufacturer	Diodes
ChipWorker Part#	CW10146638
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-226-3
Frequency	50 MHz
Voltage Rating (DC)	400 V
Current Rating	300 mA
Power Rating	1 W
Number of Positions	3 Position
Polarity	NPN
Power Dissipation	1 W
Breakdown Voltage (Collector to Emitter)	400 V
Continuous Collector Current	0.3A
hFE Min	100 @50mA, 10V
Input Power (Max)	1 W
DC Current Gain (hFE)	100
Operating Temperature (Max)	200 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	1000 mW
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Material	Silicon
Operating Temperature	-55℃ ~ 200℃
Product Lifecycle Status	Active
Packaging	Bulk
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

Design filters, receivers, transmitters, op-amps, power supplies, and control circuits with this versatile NPN ZTX458 GP BJT from Diodes Zetex. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 1000 mW. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 200 °C. It has a maximum collector emitter voltage of 400 V and a maximum emitter base voltage of 5 V.

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