ZXTN2018FTA - Diodes

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

ZXTN2018FTA
Manufacturer

Diodes
ChipWorker Part#

CW17213740
Category

BJT Transistor, BJT
RoHS

Lead free / RoHS Compliant
Description

Trans GP BJT NPN 60V 5A 1560mW Automotive 3Pin SOT-23 T/R
Documentation

Datasheet

ZXTN2018FTA Global Supplier

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ZXTN2018FTA Specifications

Attribute	Attribute Value

Part Number	ZXTN2018FTA
Manufacturer	Diodes
ChipWorker Part#	CW17213740
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	SOT-23-3
Frequency	130 MHz
Voltage Rating (DC)	60.0 V
Current Rating	5.00 A
Polarity	NPN
Power Dissipation	1.56 W
Breakdown Voltage (Collector to Emitter)	60 V
Continuous Collector Current	5A
hFE Min	100 @2A, 1V
hFE Max	300 @2A, 1V
Input Power (Max)	1.2 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	1560 mW
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Operating Temperature	-55℃ ~ 150℃
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
ECCN Code	EAR99

Product Description

Add switching and amplifying capabilities to your electronic circuit with this NPN ZXTN2018FTA GP BJT from Diodes Zetex. This bipolar junction transistor"s maximum emitter base voltage is 7 V. Its maximum power dissipation is 1560 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 7 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.

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- Surface testing

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