2N3055 - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

2N3055
Manufacturer

ST Microelectronics
ChipWorker Part#

CW8393896
Category

BJT Transistor, BJT
RoHS

Lead free / RoHS Compliant
Description

Trans GP BJT NPN 60V 15A 3Pin(2+Tab) TO-3 Tray
Documentation

Datasheet

2N3055 Global Supplier

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2N3055 Specifications

Attribute	Attribute Value

Part Number	2N3055
Manufacturer	ST Microelectronics
ChipWorker Part#	CW8393896
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	2 Pin
Case/Package	TO-3
Frequency	1 MHz
Voltage Rating (DC)	60.0 V
Current Rating	15.0 A
Power Rating	115 W
Number of Positions	2 Position
Polarity	NPN
Power Dissipation	115 W
Breakdown Voltage (Collector to Base)	100 V
Breakdown Voltage (Collector to Emitter)	60 V
hFE Min	20 @4A, 4V
hFE Max	70
Input Power (Max)	115 W
DC Current Gain (hFE)	70
Operating Temperature (Max)	200 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	115000 mW
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Size-Length	39.5 mm
Size-Width	26.2 mm
Size-Height	8.7 mm
Material	Silicon
Operating Temperature	-65℃ ~ 200℃
Product Lifecycle Status	Not Recommended for New Designs
Packaging	Tray
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2014/06/16
ECCN Code	EAR99

Product Description

The 2N3055 from STMicroelectronics is a through hole complementary power transistor in TO-3 package. This device manufactured in planar technology with "base island" layout and suitable for power linear and switching applications.
Collector to emitter voltage (Vce) is 70V at 100 ohm RBE
Collector current (Ic) is 15A
Power dissipation (Pd) is 115W
Collector to emitter saturation voltage of 3V at 10A collector current
DC current gain (hFE) of 5 at 10A collector current
Operating junction temperature range from 200°C

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