2N3500 - Microsemi

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

2N3500
Manufacturer

Microsemi
ChipWorker Part#

CW44090103
Category

BJT Transistor, BJT
Package

TO-39-3
Description

Trans GP BJT NPN 150V 0.3A 3Pin TO-39
Documentation

Datasheet

2N3500 Global Supplier

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2N3500 Specifications

Attribute	Attribute Value

Part Number	2N3500
Manufacturer	Microsemi
ChipWorker Part#	CW44090103
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-39-3
Power Dissipation	1 W
Breakdown Voltage (Collector to Emitter)	150 V
hFE Min	40 @150mA, 10V
hFE Max	120 @150mA, 10V
Input Power (Max)	1 W
Operating Temperature (Max)	200 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	1000 mW
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Material	Silicon
Operating Temperature	-65℃ ~ 200℃ (TJ)
Product Lifecycle Status	Active
Packaging	Bulk
RoHS	Non-Compliant
Lead-Free Status
ECCN Code	EAR99

Product Description

This family of 2N3498 thru 2N3501 epitaxial planar transistors are military qualified up to a JANS level for high-reliability applications. These devices are also available in TO-5 and low profile U4 packaging. Microsemi also offers numerous other transistor products to meet higher and lower power ratings with various switching speed requirements in both through-hole and surface-mount packages.

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