NJW0281G - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

NJW0281G
Manufacturer

ON Semiconductor
ChipWorker Part#

CW52295
Category

BJT Transistor, BJT
Package

TO-3-3
Description

TO-3P NPN 250V 15A
Documentation

Datasheet

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NJW0281G Specifications

Attribute	Attribute Value

Part Number	NJW0281G
Manufacturer	ON Semiconductor
ChipWorker Part#	CW52295
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-3-3
Frequency	30 MHz
Number of Positions	3 Position
Polarity	NPN
Power Dissipation	150 W
Gain Bandwidth Product	30 MHz
Breakdown Voltage (Collector to Emitter)	250 V
Continuous Collector Current	15A
hFE Min	75
hFE Max	75
Input Power (Max)	150 W
DC Current Gain (hFE)	75
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	150 W
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Size-Length	15.8 mm
Size-Width	5 mm
Size-Height	20.1 mm
Material	Silicon
Operating Temperature	-65℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
ECCN Code	EAR99

Product Description

The NJW0281G is a NPN Bipolar Power Transistor with superior gain linearity and safe operating area performance. This transistor is ideal for high fidelity audio amplifier output stages and other linear applications.
Complement to NJW0302G
Exceptional Safe Operating Area
Gain Matching within 10% from 50 mA to 3 A
Excellent Gain Linearity
High BVCEO
High Frequency
Reliable Performance at Higher Powers
Accurate Reproduction of Input Signal
Greater Dynamic Range
High Amplifier Bandwidth

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