2N3960 - Microsemi

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

2N3960
Manufacturer

Microsemi
ChipWorker Part#

CW363361280
Category

BJT Transistor, BJT
Description

Trans Npn 12V To-18
Documentation

Datasheet

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2N3960 Specifications

Attribute	Attribute Value

Part Number	2N3960
Manufacturer	Microsemi
ChipWorker Part#	CW363361280
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-206
Breakdown Voltage (Collector to Emitter)	12 V
hFE Min	60 @10mA, 1V
Input Power (Max)	400 mW
Operating Temperature (Max)	200 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	400 mW
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Material	Silicon
Operating Temperature	-65℃ ~ 200℃ (TJ)
Product Lifecycle Status	Obsolete
Packaging	Bulk
RoHS	Non-Compliant

Product Description

This 2N3960 epitaxial planar transistor is military qualified up to the JANTXV level for high-reliability applications. It features a thru-hole TO-18 package. This device is also available in a low profile ceramic UB package.

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