2N5401 - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

2N5401
Manufacturer

ON Semiconductor
ChipWorker Part#

CW19939830
Category

BJT Transistor, BJT
Package

TO-226-3
Description

Trans GP BJT PNP 150V 0.6A 3Pin TO-92
Documentation

Datasheet

2N5401 Global Supplier

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2N5401 Specifications

Attribute	Attribute Value

Part Number	2N5401
Manufacturer	ON Semiconductor
ChipWorker Part#	CW19939830
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-226-3
Voltage Rating (DC)	-150 V
Current Rating	-600 mA
Polarity	PNP
Power Dissipation	625 mW
Breakdown Voltage (Collector to Base)	160 V (min)
Breakdown Voltage (Collector to Emitter)	150 V
hFE Min	60 @10mA, 5V
Input Power (Max)	625 mW
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	625 mW
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Material	Silicon
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Unknown
Packaging	Bulk
RoHS	Non-Compliant
Lead-Free Status	Contains Lead
ECCN Code	EAR99

Product Description

This PNP Bipolar Transistor is designed for use in industrial and consumer applications. The device is housed in the TO-92 package, which is designed for medium power applications.
Features
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