2N5657 - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

2N5657
Manufacturer

ON Semiconductor
ChipWorker Part#

CW77349270
Category

BJT Transistor, BJT
Package

TO-225-3
Description

TO-225-3 NPN 350V 0.5A
Documentation

Datasheet

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2N5657 Specifications

Attribute	Attribute Value

Part Number	2N5657
Manufacturer	ON Semiconductor
ChipWorker Part#	CW77349270
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Case/Package	TO-225-3
Voltage Rating (DC)	250 V
Current Rating	3.70 A
Polarity	N-Channel
Power Dissipation	20 W
Gain Bandwidth Product	10 MHz
Breakdown Voltage (Collector to Emitter)	350 V
Continuous Collector Current	0.5A
hFE Min	25
hFE Max	250
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	65 ℃
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Size-Length	7.74 mm
Size-Width	2.66 mm
Size-Height	11.04 mm
Product Lifecycle Status	Unknown
Packaging	Bulk
Minimum Packing Quantity	500
RoHS	RoHS Compliant
Lead-Free Status	Contains Lead
ECCN Code	EAR99

Product Description

Plastic NPN Silicon High-Voltage Power Transistor
0.5 AMPERE POWER TRANSISTORS NPN SILICON 250–350 VOLTS 20 WATTS
. . . designed for use in line–operated equipment such as audio output amplifiers; low–current, high–voltage converters; and AC line relays.
•Excellent DC Current Gain –
hFE= 30–250 @ IC= 100 mAdc
•Current–Gain – Bandwidth Product –
fT= 10 MHz (Min) @ IC= 50 mAdc

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