2N5884G - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

2N5884G
Manufacturer

ON Semiconductor
ChipWorker Part#

CW15997921
Category

BJT Transistor, BJT
Package

TO-204-2
Description

TO-3 PNP 80V 25A
Documentation

Datasheet

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2N5884G Specifications

Attribute	Attribute Value

Part Number	2N5884G
Manufacturer	ON Semiconductor
ChipWorker Part#	CW15997921
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	2 Pin
Case/Package	TO-204-2
Frequency	4 MHz
Voltage Rating (DC)	-80.0 V
Current Rating	-25.0 A
Number of Positions	2 Position
Polarity	PNP, P-Channel
Power Dissipation	200 W
Gain Bandwidth Product	4 MHz
Breakdown Voltage (Collector to Emitter)	80 V
Thermal Resistance	0.875℃/W (RθJC)
Continuous Collector Current	25A
hFE Min	20
hFE Max	100
Input Power (Max)	200 W
DC Current Gain (hFE)	4
Operating Temperature (Max)	200 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	200000 mW
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Size-Length	39.37 mm
Size-Width	26.67 mm
Size-Height	8.51 mm
Material	Silicon
Operating Temperature	-65℃ ~ 200℃
Product Lifecycle Status	Active
Packaging	Tray
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2016/06/20
ECCN Code	EAR99

Product Description

The 2N5884G is a 25A PNP high-power complementary Silicon Transistor designed for general-purpose power amplifier and switching applications.
Low collector-emitter saturation voltage (1VDC maximum VCE(sat) @ 15A DC IC)
Low leakage current (1mA DC maximum ICEX @ rated voltage)
Excellent DC current gain (20 minimum hFE @ 10A DC IC)

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