2N5886G - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

2N5886G
Manufacturer

ON Semiconductor
ChipWorker Part#

CW9732582
Category

BJT Transistor, BJT
Package

TO-204-2
Description

TO-3 NPN 80V 25A
Documentation

Datasheet

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2N5886G Specifications

Attribute	Attribute Value

Part Number	2N5886G
Manufacturer	ON Semiconductor
ChipWorker Part#	CW9732582
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	2 Pin
Case/Package	TO-204-2
Frequency	4 MHz
Voltage Rating (DC)	80.0 V
Current Rating	25.0 A
Power Rating	200 W
Number of Positions	2 Position
Polarity	NPN
Power Dissipation	200 W
Breakdown Voltage (Collector to Emitter)	80 V
Thermal Resistance	0.875℃/W (RθJC)
Continuous Collector Current	25A
hFE Min	20 @10A, 4V
hFE Max	100
Input Power (Max)	200 W
DC Current Gain (hFE)	4
Operating Temperature (Max)	200 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	200000 mW
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Size-Length	39.37 mm
Size-Width	26.67 mm
Size-Height	8.51 mm
Material	Silicon
Operating Temperature	-65℃ ~ 200℃
Product Lifecycle Status	Active
Packaging	Tray
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2016/06/20
ECCN Code	EAR99

Product Description

**NPN Power Transistors, ON Semiconductor**
These ON Semiconductor transistors can amplify analog or digital signals. They can also switch DC or function as an oscillator.

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