2N6036 - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

2N6036
Manufacturer

ST Microelectronics
ChipWorker Part#

CW27231200
Category

BJT Transistor, BJT
Package

TO-126-3
Description

Trans Darlington PNP 80V 4A 40000mW 3Pin(3+Tab) SOT-32 Tube
Documentation

Datasheet

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2N6036 Specifications

Attribute	Attribute Value

Part Number	2N6036
Manufacturer	ST Microelectronics
ChipWorker Part#	CW27231200
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-126-3
Voltage Rating (DC)	-80.0 V
Current Rating	-4.00 A
Number of Positions	3 Position
Polarity	NPN
Power Dissipation	40 W
Breakdown Voltage (Collector to Emitter)	80 V
hFE Min	750 @2A, 3V
Input Power (Max)	40 W
DC Current Gain (hFE)	750
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	40000 mW
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Size-Width	2.7 mm
Operating Temperature	150℃ (TJ)
Product Lifecycle Status	Not Recommended for New Designs
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Contains Lead
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

Compared to other transistors, the PNP 2N6036 Darlington transistor from STMicroelectronics can provide you with a higher current gain value. This Darlington transistor array"s maximum emitter base voltage is 5 V, while its maximum base emitter saturation voltage is 4@4mA@4A V. This product"s maximum continuous DC collector current is 4 A, while its minimum DC current gain is 100@4A@3 V|750@2A@3V|500@500mA@3V. It has a maximum collector emitter saturation voltage of 2@8mA@2A|3@40mA@4A V. Its maximum power dissipation is 40000 mW. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This Darlington transistor array has a minimum operating temperature of -65 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 80 V and a maximum emitter base voltage of 5 V.

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