2SD2150T100R - ROHM Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

2SD2150T100R
Manufacturer

ROHM Semiconductor
ChipWorker Part#

CW99719366
Category

BJT Transistor, BJT
Package

TO-243
Description

MPT NPN 20V 3A
Documentation

Datasheet

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2SD2150T100R Specifications

Attribute	Attribute Value

Part Number	2SD2150T100R
Manufacturer	ROHM Semiconductor
ChipWorker Part#	CW99719366
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	4 Pin
Case/Package	TO-243
Voltage Rating (DC)	20.0 V
Current Rating	3.00 A
Polarity	N-Channel, NPN
Power Dissipation	0.5 W
Gain Bandwidth Product	290 MHz
Breakdown Voltage (Collector to Emitter)	20 V
Continuous Collector Current	3A
hFE Min	180 @100mA, 2V
hFE Max	560
Input Power (Max)	500 mW
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	2000 mW
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Size-Length	4.5 mm
Size-Width	2.5 mm
Size-Height	1.5 mm
Operating Temperature	150℃ (TJ)
Product Lifecycle Status	Not Recommended for New Designs
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC

Product Description

* Low VCE(sat). * VCE(sat) = 0.2V (Typ.) * (IC / IB = 2A / 0.1A) * Excellent current gain characteristics * Complements the 2SB1424 / 2SA1585S.

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