2STD1665T4 - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

2STD1665T4
Manufacturer

ST Microelectronics
ChipWorker Part#

CW15725526
Category

BJT Transistor, BJT
Package

TO-252-3
Description

DPAK NPN 65V 6A
Documentation

Datasheet

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2STD1665T4 Specifications

Attribute	Attribute Value

Part Number	2STD1665T4
Manufacturer	ST Microelectronics
ChipWorker Part#	CW15725526
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-252-3
Voltage Rating (DC)	150 V
Current Rating	6.00 A
Number of Positions	3 Position
Polarity	NPN
Power Dissipation	15 W
Breakdown Voltage (Collector to Emitter)	65 V
Continuous Collector Current	6A
hFE Min	150 @2A, 1V
Input Power (Max)	15 W
DC Current Gain (hFE)	320
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	15000 mW
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Size-Length	6.6 mm
Size-Width	6.2 mm
Size-Height	2.4 mm
Operating Temperature	150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
ECCN Code	EAR99

Product Description

The 2STD1665T4 is a 65V Low Voltage Fast-switching NPN Power Transistor with exceptional high gain performance coupled with very low saturation voltage. It is designed in planar technology with base island layout. Fast switching times and very low saturation voltage resulting in reduced switching and conduction losses.
Very low collector to emitter saturation voltage
High current gain characteristic
Fast-switching speed
Well-controlled hFE parameter for increased reliability

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