2STW100 - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

2STW100
Manufacturer

ST Microelectronics
ChipWorker Part#

CW63190196
Category

BJT Transistor, BJT
Package

TO-247-3
Description

TO-247 NPN 80V 25A
Documentation

Datasheet

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2STW100 Specifications

Attribute	Attribute Value

Part Number	2STW100
Manufacturer	ST Microelectronics
ChipWorker Part#	CW63190196
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-247-3
Polarity	NPN
Power Dissipation	130 W
Breakdown Voltage (Collector to Emitter)	80 V
Continuous Collector Current	25A
hFE Min	500 @10A, 3V
Input Power (Max)	130 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	130000 mW
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Operating Temperature	150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
ECCN Code	EAR99

Product Description

Do you have a circuit where a higher current gain is required? STMicroelectronics" NPN 2STW100 Darlington transistor can help! This product"s maximum continuous DC collector current is 25 A, while its minimum DC current gain is 300@20A@3 V|500@10A@3V|600@5A@3V. It has a maximum collector emitter saturation voltage of 1.2@20mA@5A|1.75@40mA@10A|3.5@80mA@20A V. This Darlington transistor array"s maximum base emitter saturation voltage is 3.3@80mA@20A V. Its maximum power dissipation is 130000 mW. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This Darlington transistor array has a minimum operating temperature of -65 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 80 V.

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