APT75GT120JRDQ3 - Microsemi

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

APT75GT120JRDQ3
Manufacturer

Microsemi
ChipWorker Part#

CW58895533
Category

IGBT Transistor, IGBT Module
Package

SOT-227-4
Description

Trans IGBT Module N-CH 1200V 97A 480000mW 4Pin SOT-227
Documentation

Datasheet

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APT75GT120JRDQ3 Specifications

Attribute	Attribute Value

Part Number	APT75GT120JRDQ3
Manufacturer	Microsemi
ChipWorker Part#	CW58895533
Category	IGBT Transistor, IGBT Module
Documentation	Datasheet
Mounting Style	Chassis
Number of Pins	4 Pin
Case/Package	SOT-227-4
Power Dissipation	480000 mW
Breakdown Voltage (Collector to Emitter)	1200 V
Input Capacitance (Cies)	5.1nF @25V
Input Power (Max)	480 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	480000 mW
	expand all
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
ECCN Code	ECL99

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