AUIRF7341Q - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

AUIRF7341Q
Manufacturer

Infineon
ChipWorker Part#

CW88696466
Category

MOSFET, MOSFET Transistor
Package

SOIC-8
Description

SOIC N-CH 55V 5.1A
Documentation

Datasheet

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AUIRF7341Q Specifications

Attribute	Attribute Value

Part Number	AUIRF7341Q
Manufacturer	Infineon
ChipWorker Part#	CW88696466
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	8 Pin
Case/Package	SOIC-8
Number of Positions	8 Position
Drain to Source Resistance (on) (Rds)	0.043 Ω
Polarity	N-CH
Power Dissipation	2.4 W
Threshold Voltage	1 V
Drain to Source Voltage (Vds)	55 V
Continuous Drain Current (Ids)	5.1A
Rise Time	7.7 ns
Input Capacitance (Ciss)	780pF @25V(Vds)
Input Power (Max)	2.4 W
Fall Time	12.5 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	2.4 W
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Size-Length	5 mm
Size-Width	4 mm
Size-Height	1.5 mm
Material	Silicon
Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17

Product Description

The AUIRF7341Q is a 55V dual N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using advanced planar technology. The automotive MOSFET offers benchmark figure of merit performance and their design optimized to address key applications such as electric power steering, injection, micro hybrid and HEV.
175°C Operating temperature
Fully avalanche rated
Dynamic dV/dt rating
Logic level gate drive
Automotive qualified
ESD sensitive device, take proper precaution while handling the device.

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