AUIRG4PH50S - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

AUIRG4PH50S
Manufacturer

Infineon
ChipWorker Part#

CW2412321
Category

IGBT Transistor, IGBT Module
Package

TO-247-3
Description

IGBT Single Transistor, 57A, 1.75V, 217mW, 1.2kV, TO-247AC, 3Pins
Documentation

Datasheet

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AUIRG4PH50S Specifications

Attribute	Attribute Value

Part Number	AUIRG4PH50S
Manufacturer	Infineon
ChipWorker Part#	CW2412321
Category	IGBT Transistor, IGBT Module
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-247-3
Number of Positions	3 Position
Power Dissipation	217 mW
Breakdown Voltage (Collector to Emitter)	1200 V
Input Power (Max)	200 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	200 W
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Size-Length	15.87 mm
Size-Width	5.31 mm
Size-Height	20.7 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
ECCN Code	EAR99

Product Description

The AUIRG4PH50S is an Insulated Gate Bipolar Transistor for use with PTC heater. The generation 4 IGBT design provides tighter parameter distribution and higher efficiency. It is optimized for minimum saturation voltage and low operating frequencies (<1kHz).
Low collector-to-emitter voltage

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