BCP56TA ,BJT Transistor, BJT - Diodes

The pictures are for reference only, and the specific specifications can be found in the product manual.

Popularity Score

101 points

Part No

BCP56TA
Manufacturer

Diodes
ChipWorker Part#

CW9449600
Category

BJT Transistor, BJT
Package

TO-261-4
Description

Trans GP BJT NPN 80V 1A 2000mW Automotive 4Pin(3+Tab) SOT-223 T/R
Documentation

Datasheet
Ships from

Moscow
Наличие

234 pcs In Stock
Estimated Price

$ 0.06

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BCP56TA Specifications

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Attribute	Attribute Value

Part Number	BCP56TA
Manufacturer	Diodes
ChipWorker Part#	CW9449600
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	4 Pin
Case/Package	TO-261-4
Frequency	150 MHz
Voltage Rating (DC)	80.0 V
Current Rating	1.00 A
Power Rating	2 W
Polarity	NPN
Power Dissipation	2 W
Breakdown Voltage (Collector to Emitter)	80 V
Continuous Collector Current	1A
hFE Min	40 @150mA, 2V
Input Power (Max)	2 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	2000 mW
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Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
ECCN Code	EAR99
HK STC License	NLR

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Product Description

The three terminals of this NPN BCP56TA GP BJT from Diodes Zetex give it the ability to be used as either an electronic switch or amplifier. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 2000 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 80 V and a maximum emitter base voltage of 5 V.

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- Please check the technical specifications of the products when ordering.
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