BCV62CE6327HTSA1 - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

BCV62CE6327HTSA1
Manufacturer

Infineon
ChipWorker Part#

CW34242664
Category

BJT Transistor, BJT
Package

TO-253-4
Description

SOT-143 PNP 30V 0.1A
Documentation

Datasheet

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BCV62CE6327HTSA1 Specifications

Attribute	Attribute Value

Part Number	BCV62CE6327HTSA1
Manufacturer	Infineon
ChipWorker Part#	CW34242664
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	4 Pin
Case/Package	TO-253-4
Frequency	250 MHz
Voltage Rating (DC)	-30.0 V
Current Rating	-100 mA
Polarity	PNP
Power Dissipation	300 mW
Breakdown Voltage (Collector to Emitter)	30 V
Continuous Collector Current	0.1A
hFE Min	420 @2mA, 5V
Input Power (Max)	300 mW
DC Current Gain (hFE)	520
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	300 mW
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Size-Length	2.9 mm
Size-Width	1.3 mm
Size-Height	0.9 mm
Material	Silicon
Operating Temperature	150℃ (TJ)
Product Lifecycle Status	Not Recommended for New Designs
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17

Product Description

The BCV 62C E6327 is a PNP silicon double Bipolar Transistor Array with good thermal coupling and VBE matching.
To be used as a current mirror
High current gain
Low collector-emitter saturation voltage

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