BD179 - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

BD179
Manufacturer

ST Microelectronics
ChipWorker Part#

CW142364637
Category

BJT Transistor, BJT
Package

TO-126-3
Description

Trans GP BJT NPN 80V 3A 3Pin(3+Tab) SOT-32 Tube
Documentation

Datasheet

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BD179 Specifications

Attribute	Attribute Value

Part Number	BD179
Manufacturer	ST Microelectronics
ChipWorker Part#	CW142364637
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-126-3
Power Dissipation	30 W
Breakdown Voltage (Collector to Emitter)	80 V
hFE Min	40
hFE Max	250
Input Power (Max)	30 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	30000 mW
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Size-Length	7.8 mm
Size-Width	2.7 mm
Size-Height	10.8 mm
Material	Silicon
Operating Temperature	150℃ (TJ)
Product Lifecycle Status	Not Recommended for New Designs
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free

Product Description

Description
The device is manufactured in Planar technology with “Base Island” layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage.
Features
■ NPN transistor
Applications
■ General purpose switching

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