BD677 - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

BD677
Manufacturer

ST Microelectronics
ChipWorker Part#

CW3328000
Category

BJT Transistor, BJT
Package

TO-126-3
Description

Trans Darlington NPN 60V 4A 40000mW 3Pin(3+Tab) SOT-32 Tube
Documentation

Datasheet

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BD677 Specifications

Attribute	Attribute Value

Part Number	BD677
Manufacturer	ST Microelectronics
ChipWorker Part#	CW3328000
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-126-3
Voltage Rating (DC)	60.0 V
Current Rating	4.00 A
Number of Positions	3 Position
Polarity	NPN
Power Dissipation	40 W
Breakdown Voltage (Collector to Emitter)	60 V
hFE Min	750 @1.5A, 3V
Input Power (Max)	40 W
DC Current Gain (hFE)	750
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	40000 mW
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Size-Length	7.8 mm
Size-Width	2.7 mm
Size-Height	10.8 mm
Operating Temperature	150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

The BD677 is a 60V Silicon NPN Complementary Power Darlington Transistor manufactured in planar base island technology with monolithic Darlington configuration. Monolithic Darlington configuration with integrated anti parallel collector-emitter diode. Fast switching times and very low saturation voltage resulting in reduced switching and conduction losses.
Good hFE linearity
High fT frequency
Well-controlled hFE parameter for increased reliability

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