BDX53C - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

BDX53C
Manufacturer

ST Microelectronics
ChipWorker Part#

CW400200
Category

BJT Transistor, BJT
Package

TO-220-3
Description

Trans Darlington NPN 100V 8A 60000mW 3Pin(3+Tab) TO-220 Tube
Documentation

Datasheet

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BDX53C Specifications

Attribute	Attribute Value

Part Number	BDX53C
Manufacturer	ST Microelectronics
ChipWorker Part#	CW400200
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Number of Positions	3 Position
Polarity	NPN
Power Dissipation	60 W
Breakdown Voltage (Collector to Emitter)	100 V
hFE Min	750 @3A, 3V
Input Power (Max)	60 W
DC Current Gain (hFE)	750
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	60000 mW
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Size-Length	10.4 mm
Size-Width	4.6 mm
Size-Height	9.15 mm
Operating Temperature	150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
ECCN Code	EAR99

Product Description

The BDX53C from STMicroelectronics is a through hole complementary power darlington transistor in TO-220 package. This device manufactured in planar base island technology with monolithic darlington configuration. This transistor features good DC gain and high fT frequency. BDX53C is typically suited for linear, switching industrial equipment and audio amplification.
Collector to emitter voltage (Vce) is 100V
Collector current (Ic) is 8A
Power dissipation (Pd) is 60W
Collector to emitter saturation voltage of 2V at 3A collector current
DC current gain (hFE) of 750 at 3A collector current
Operating junction temperature range from 150°C

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