BFU550AR - NXP

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

BFU550AR
Manufacturer

NXP
ChipWorker Part#

CW3187400
Category

BJT Transistor, BJT
Package

SOT-23-3
Description

Trans RF BJT NPN 16V 0.08A 450mW Automotive 3Pin TO-236AB T/R
Documentation

Datasheet

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BFU550AR Specifications

Attribute	Attribute Value

Part Number	BFU550AR
Manufacturer	NXP
ChipWorker Part#	CW3187400
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	SOT-23-3
Frequency	11000 MHz
Number of Positions	3 Position
Power Dissipation	450 mW
Input Capacitance	0.98 pF
Breakdown Voltage (Collector to Emitter)	12 V
Gain	18 dB
hFE Min	60 @15mA, 8V
Input Power (Max)	450 mW
DC Current Gain (hFE)	60
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-40 ℃
Power Dissipation (Max)	450 mW
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Material	Silicon
Operating Temperature	-40℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
ECCN Code	EAR99

Product Description

This BFU550AR RF amplifier from NXP Semiconductors is designed to operate in high radio frequency input power situations and is perfect for a variety of applications. This RF transistor has an operating temperature range of -40 °C to 150 °C.

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