BFU550AR ,BJT Transistor, BJT - NXP

The pictures are for reference only, and the specific specifications can be found in the product manual.

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73 points

Part No

BFU550AR
Manufacturer

NXP
ChipWorker Part#

CW3187400
Category

BJT Transistor, BJT
Package

SOT-23-3
Description

Trans RF BJT NPN 16V 0.08A 450mW Automotive 3Pin TO-236AB T/R
Documentation

Datasheet
Ships from

Moscow
Наличие

In Stock
Estimated Price

$ 0.2

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BFU550AR Specifications

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Attribute	Attribute Value

Part Number	BFU550AR
Manufacturer	NXP
ChipWorker Part#	CW3187400
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	SOT-23-3
Frequency	11000 MHz
Number of Positions	3 Position
Power Dissipation	450 mW
Input Capacitance	0.98 pF
Breakdown Voltage (Collector to Emitter)	12 V
Gain	18 dB
hFE Min	60 @15mA, 8V
Input Power (Max)	450 mW
DC Current Gain (hFE)	60
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-40 ℃
Power Dissipation (Max)	450 mW
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Material	Silicon
Operating Temperature	-40℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
ECCN Code	EAR99

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Product Description

This BFU550AR RF amplifier from NXP Semiconductors is designed to operate in high radio frequency input power situations and is perfect for a variety of applications. This RF transistor has an operating temperature range of -40 °C to 150 °C.

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