BSC009NE2LS - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

BSC009NE2LS
Manufacturer

Infineon
ChipWorker Part#

CW73280675
Category

MOSFET, MOSFET Transistor
Package

PG-TDSON-8
Description

TDSON N-CH 25V 41A
Documentation

Datasheet

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BSC009NE2LS Specifications

Attribute	Attribute Value

Part Number	BSC009NE2LS
Manufacturer	Infineon
ChipWorker Part#	CW73280675
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	8 Pin
Case/Package	PG-TDSON-8
Number of Positions	8 Position
Polarity	N-Channel
Power Dissipation	96 W
Threshold Voltage	2.2 V
Drain to Source Voltage (Vds)	25 V
Continuous Drain Current (Ids)	41A
Rise Time	33 ns
Input Capacitance (Ciss)	5800pF @12V(Vds)
Input Power (Max)	96 W
Fall Time	19 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	2.5W (Ta), 96W (Tc)
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Size-Length	6.1 mm
Size-Width	5.35 mm
Size-Height	1.1 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17

Product Description

Description:
With the new OptiMOS™ 25V product family, Infineon sets new standards in power density and Energy Efficiency for discrete power MOSFETs. Lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of battery management, or-ing, e-fuse and Hot-swap application. Super-SO8 package has a standard footprint that allows thinner and smaller application solutions compared to the IPB009N03LS.
Summary of Features:
Lowest on-state resistance
High DC and pulsed current capability
Easy to design-in
Benefits:
Increased battery lifetime/system efficiency
Saving space (reducing the number of devices needed)
Saving costs

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